Supraventricular tachyarrhythmias in arrhythmogenic cardiomyopathy and Brugada syndrome: a systematic review.
Authors: Canovi L, Rotondo L, Vitali F, De Raffele M, Melpignano A, Balla C, Malagù M, Pannone L, de Asmundis C, Bertini M, Tonet E
Journal: Frontiers in cardiovascular medicine
bipolar disorder
mental health
open access
Abstract
With the continuous growth of global energy demand and the increasing need for low‐grade heat utilization, the development of efficient, reliable, and environmentally friendly energy‐conversion technologies has become an important research direction in the field of energy materials [, , , , ]. Thermoelectric technology enables direct and reversible conversion between thermal energy and electrical energy, offering advantages such as the absence of moving mechanical parts, low maintenance cost, vibration‐free operation, and facile miniaturized integration [, ]. Consequently, it exhibits significant application potential in waste‐heat recovery, localized cooling, and solid‐state thermal management [, , , , ]. The energy‐conversion performance of thermoelectric materials is generally evaluated by the dimensionless thermoelectric figure of merit, , defined as =
/(
+
) =
/, where is the Seebeck coefficient, is the electrical conductivity,
is the power factor, is the absolute temperature,
is the lattice thermal conductivity,
is the electronic thermal conductivity, and is the total thermal conductivity [, ]. The practical performance of thermoelectric devices fundamentally depends on the average (
) and the engineering within the target operating temperature range []. Although conventional thermoelectric materials such as BiTe [], PbSe [], and SnTe [] have demonstrated excellent performance near room temperature and in the mid‐temperature range, issues including the scarcity of Te resources, the toxicity of Pb, and the volatility of certain chalcogen elements at elevated temperatures significantly hinder their sustainable development and large‐scale applications []. In contrast, Mg(Sb, Bi)‐based Zintl‐phase materials, which possess advantages such as low cost, low toxicity, and earth‐abundant constituent elements, have rapidly emerged as one of the most promising next‐generation thermoelectric material systems [, ]. Since their initial discovery, Mg(Sb, Bi) Zintl compounds have been regarded as promising alternatives to conventional BiTe‐based thermoelectric materials because of their non‐toxicity, environmental friendliness, and abundant elemental reserves [, ]. Meanwhile, the complex chemical bonding characteristics and significant atomic mass differences within this system are favorable for enhancing phonon scattering, thereby endowing the materials with intrinsically low
[, , ]. Intrinsic MgSb readily forms Mg vacancies and typically exhibits low‐mobility p‐type transport behavior, which severely limits its thermoelectric performance [, ]. Through strategies such as excess Mg regulation and donor doping with Te or rare‐earth/transition‐metal elements, researchers have successfully realized n‐type MgSb‐based materials and significantly improved their electrical transport properties [, , ]. Furthermore, the introduction of MgBi to construct n‐type Mg(Sb, Bi) solid solutions not only enables band‐structure modulation, bandgap narrowing, and effective‐mass optimization, but also enhances the application potential of this system from near‐room temperature to the mid‐temperature range []. Extensive efforts have been devoted to optimizing n‐type Mg(Sb, Bi)‐based thermoelectric materials, including studies on Mg volatilization and migration [, , ], grain‐size optimization [], sintering‐thickness regulation [], defect engineering [, , , ], micro/nanostructure modulation [], as well as the non‐uniform characteristics and resistance optimization of grain boundaries [, , , ]. Although these studies have substantially advanced the development of Mg(Sb, Bi)‐based materials, further enhancement of their thermoelectric performance near room temperature remains constrained by multiple factors []. In the near‐room‐temperature region, carrier mobility () is highly susceptible to grain‐boundary scattering, defect distribution, and microstructural inhomogeneity, thereby limiting further improvement of the
[]. Therefore, how to effectively regulate carrier concentration () without significantly sacrificing , while simultaneously enhancing phonon scattering, remains a central challenge for achieving high‐performance Mg(Sb, Bi)‐based thermoelectric materials [].
/(
+
) =
/, where is the Seebeck coefficient, is the electrical conductivity,
is the power factor, is the absolute temperature,
is the lattice thermal conductivity,
is the electronic thermal conductivity, and is the total thermal conductivity [, ]. The practical performance of thermoelectric devices fundamentally depends on the average (
) and the engineering within the target operating temperature range []. Although conventional thermoelectric materials such as BiTe [], PbSe [], and SnTe [] have demonstrated excellent performance near room temperature and in the mid‐temperature range, issues including the scarcity of Te resources, the toxicity of Pb, and the volatility of certain chalcogen elements at elevated temperatures significantly hinder their sustainable development and large‐scale applications []. In contrast, Mg(Sb, Bi)‐based Zintl‐phase materials, which possess advantages such as low cost, low toxicity, and earth‐abundant constituent elements, have rapidly emerged as one of the most promising next‐generation thermoelectric material systems [, ]. Since their initial discovery, Mg(Sb, Bi) Zintl compounds have been regarded as promising alternatives to conventional BiTe‐based thermoelectric materials because of their non‐toxicity, environmental friendliness, and abundant elemental reserves [, ]. Meanwhile, the complex chemical bonding characteristics and significant atomic mass differences within this system are favorable for enhancing phonon scattering, thereby endowing the materials with intrinsically low
[, , ]. Intrinsic MgSb readily forms Mg vacancies and typically exhibits low‐mobility p‐type transport behavior, which severely limits its thermoelectric performance [, ]. Through strategies such as excess Mg regulation and donor doping with Te or rare‐earth/transition‐metal elements, researchers have successfully realized n‐type MgSb‐based materials and significantly improved their electrical transport properties [, , ]. Furthermore, the introduction of MgBi to construct n‐type Mg(Sb, Bi) solid solutions not only enables band‐structure modulation, bandgap narrowing, and effective‐mass optimization, but also enhances the application potential of this system from near‐room temperature to the mid‐temperature range []. Extensive efforts have been devoted to optimizing n‐type Mg(Sb, Bi)‐based thermoelectric materials, including studies on Mg volatilization and migration [, , ], grain‐size optimization [], sintering‐thickness regulation [], defect engineering [, , , ], micro/nanostructure modulation [], as well as the non‐uniform characteristics and resistance optimization of grain boundaries [, , , ]. Although these studies have substantially advanced the development of Mg(Sb, Bi)‐based materials, further enhancement of their thermoelectric performance near room temperature remains constrained by multiple factors []. In the near‐room‐temperature region, carrier mobility () is highly susceptible to grain‐boundary scattering, defect distribution, and microstructural inhomogeneity, thereby limiting further improvement of the
[]. Therefore, how to effectively regulate carrier concentration () without significantly sacrificing , while simultaneously enhancing phonon scattering, remains a central challenge for achieving high‐performance Mg(Sb, Bi)‐based thermoelectric materials [].