Early-Onset Hemophagocytic Lymphohistiocytosis and Inflammatory Neurotoxicity Prior to Post-transplant Cyclophosphamide: A Report of Two Cases.
Authors: Shah K, Betts BC, Ross M, Lieberman A, Davila ML, Holtan S
Journal: Cureus
depression treatment
mental health
open access
Abstract
Quantum dots (QDs) are
semiconducting nanoparticles with size-dependent
emission, high color purity, and excellent solution processability. Based on these properties, quantum dot light-emitting diodes (QLEDs)
have emerged as solution-processed electroluminescent (EL) devices
offering a wide color gamut and high efficiency. In a typical QLED,
electrons and holes are injected from the electron transport layer
(ETL) and the hole transport layer (HTL), respectively, subsequently
recombining in the QD emissive layer to generate photons. Driven
by concerns over the toxicity and environmental impact of
cadmium-based QDs, significant efforts have focused on cadmium-free
QLEDs, such as InP and ZnSeTe. Unless otherwise specified, all QLEDs
discussed in this study are inorganic and cadmium-free. Advances in
material and device engineering have been reported, including the
development of HTLs and ETLs with matched energy levels and carrier
mobilities, surface ligand engineering to enhance carrier transport within the
emissive layer, and microstructural design to improve light outcoupling efficiency. Combined with the progress in QD structure and
synthesis, these advances have enabled state-of-the-art cadmium-free
QLEDs to achieve high performance, with external quantum efficiencies
(EQEs) over 23% for red InP-based devices, approaching 22% for green ZnSeTe-based devices, and exceeding 20% for blue ZnSe-based devices, accompanied by luminance levels reaching 10 cd m. Moreover, a set of broadly adopted
device architectures has emerged for different types of QDs, providing
a reliable baseline for QLED fabrication. Despite these advances, QLED performance remains highly sensitive
to fabrication and measurement conditions, particularly for researchers
entering the field. QLED fabrication is based on multilayer solution
processing, including the hole injection layer (HIL), HTL, QD thin
film, and the ETL. Solution processing, however, involves complex
fluid mechanics and is typically less controllable than vacuum deposition. The quality of each resulting film directly affects the performance
of the QLEDs, as manufacturing defects or incomplete layer coverage
can lead to charge leakage, nonradiative recombination, and efficiency
loss. From the processing perspective, controlling
solution properties, processing parameters, and interlayer mixing
is therefore essential for producing uniform, defect-free films.
semiconducting nanoparticles with size-dependent
emission, high color purity, and excellent solution processability. Based on these properties, quantum dot light-emitting diodes (QLEDs)
have emerged as solution-processed electroluminescent (EL) devices
offering a wide color gamut and high efficiency. In a typical QLED,
electrons and holes are injected from the electron transport layer
(ETL) and the hole transport layer (HTL), respectively, subsequently
recombining in the QD emissive layer to generate photons. Driven
by concerns over the toxicity and environmental impact of
cadmium-based QDs, significant efforts have focused on cadmium-free
QLEDs, such as InP and ZnSeTe. Unless otherwise specified, all QLEDs
discussed in this study are inorganic and cadmium-free. Advances in
material and device engineering have been reported, including the
development of HTLs and ETLs with matched energy levels and carrier
mobilities, surface ligand engineering to enhance carrier transport within the
emissive layer, and microstructural design to improve light outcoupling efficiency. Combined with the progress in QD structure and
synthesis, these advances have enabled state-of-the-art cadmium-free
QLEDs to achieve high performance, with external quantum efficiencies
(EQEs) over 23% for red InP-based devices, approaching 22% for green ZnSeTe-based devices, and exceeding 20% for blue ZnSe-based devices, accompanied by luminance levels reaching 10 cd m. Moreover, a set of broadly adopted
device architectures has emerged for different types of QDs, providing
a reliable baseline for QLED fabrication. Despite these advances, QLED performance remains highly sensitive
to fabrication and measurement conditions, particularly for researchers
entering the field. QLED fabrication is based on multilayer solution
processing, including the hole injection layer (HIL), HTL, QD thin
film, and the ETL. Solution processing, however, involves complex
fluid mechanics and is typically less controllable than vacuum deposition. The quality of each resulting film directly affects the performance
of the QLEDs, as manufacturing defects or incomplete layer coverage
can lead to charge leakage, nonradiative recombination, and efficiency
loss. From the processing perspective, controlling
solution properties, processing parameters, and interlayer mixing
is therefore essential for producing uniform, defect-free films.