Weed-derived allelochemicals enhance maize performance through multidimensional modulation of growth and stress physiology.

The rapid proliferation of data-intensive technologies, such as artificial intelligence and big data analytics, has exposed the inherent limitations of the traditional von Neumann architecture []. The physical separation of memory and processing units leads to significant energy dissipation and latency during high-frequency data shuttling—a phenomenon known as the “von Neumann bottleneck” []. As the device dimensions continue to scale down, the continuation of traditional Moore’s Law is confronting fundamental physical limits; moreover, solely relying on size reduction fails to resolve the inherent inefficiency stemming from the separation of memory and processing units [,,]. Consequently, neuromorphic computing, inspired by the low-power consumption and massively parallel processing of the biological brain, has emerged as a promising non-von Neumann alternative [,,,]. Among various candidates, memristors are regarded as ideal hardware building blocks for emulating biological synapses due to their non-volatile switching, rapid operation, and energy efficiency [,,]. However, traditional memristors employing metal-oxide functional layers are inherently limited by the stochasticity arising from the random migration of oxygen vacancies, which restricts their application in high-density integrated circuits [,]. Consequently, exploring emerging functional materials and designing memristors with enhanced performance have become pivotal research directions. The emergence of low-dimensional materials, spearheaded by the discovery of graphene [], has illuminated novel directions for memristor research and generated widespread attention within the academic community [,]. Unlike conventional bulk materials, two-dimensional (2D) materials possess atomic-scale thickness and an exceptionally high surface-to-volume ratio. Their outstanding mechanical flexibility also renders them ideal candidates for flexible and wearable electronic [,]. Furthermore, the exceptional sensitivity of 2D materials to external electric fields facilitates precise control over ionic migration and charge transport [,,,]. This capability not only reduces the switching energy but also effectively suppresses stochastic fluctuations, thereby paving a new way for the development of highly stable, low-power memristive devices for artificial synaptic applications [,,]. Among various 2D materials, transition metal dichalcogenides (TMDs) [] stand out for their diverse band structures and superior electrical properties. In particular, as a typical TMD member, molybdenum disulfide (MoS) possesses a tunable direct bandgap [] and outstanding photoresponse, demonstrating immense potential for applications in optoelectronic and memory devices [,,,,]. Xiong et al. constructed TiN/O–MoS memristors using mechanical exfoliation, effectively reducing the operation voltage and significantly enhancing the switching ratio through oxygen-doping engineering [], while Ranganathan et al. employed an in situ “post-sulfurization” chemical vapor deposition (CVD) strategy to grow MoS thin films for memristor fabrication, achieving long-term stability in both high and low resistance states to boost non-volatile memory performance []. Furthermore, Paolo Samorì et al. utilized supramolecular engineering to construct synaptic device based on 2D asymmetrically functionalized MoS film, achieving independent regulation of optoelectronic dual-modes and the flexible switching from short-term plasticity (STP) to long-term plasticity (LTP) []. These studies demonstrate that the vertical layered structure of MoS provides natural van der Waals gap channels, which greatly facilitates the migration of active metal ions. In fact, defect engineering, particularly the precise generation, regulation, and fabrication of atomic sulfur vacancies (V) within TMDs, has been extensively recognized as a pivotal strategy to tailor local electronic structures and optimize resistive switching (RS) characteristics [,]. With the continuous advancement of technology, exploring large-area fabrication of high-quality MoS thin films has become indispensable for achieving the arrayed integration of high-performance MoS memristors. While traditional mechanical exfoliation can produce MoS nanosheets with superior intrinsic properties, its low yield and substantial variability among exfoliated flakes impede large scale manufacturing []. Liquid-phase exfoliation features facile processing, low cost, and process compatibility, yet it has shortcomings in terms of large-area uniformity and film continuity [,]. Although CVD is a promising route for wafer-scale continuous MoS films, its high growth temperatures poses significant integration challenges with silicon-based processes or flexible substrates [,]. Therefore, developing a MoS thin-film fabrication technology that balances large-scale preparation and processing flexibility holds significant practical importance. However, during the transfer and integration of large